Electrical characteristics of GaAs MIS Schottky diodes
- 1 July 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (7) , 621-631
- https://doi.org/10.1016/0038-1101(79)90135-7
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Effects of ultrathin oxides in conducting MIS structures on GaAsJournal of Vacuum Science and Technology, 1978
- A note on the evaluation of Schottky diode parameters in the presence of an interfacial layerElectronics Letters, 1978
- GaAs charge-coupled devicesApplied Physics Letters, 1978
- dc plasma anodization of GaAsApplied Physics Letters, 1978
- Low-temperature plasma oxidation of GaAsApplied Physics Letters, 1978
- 2.2 Substrate surface damages by rf-sputteringVacuum, 1977
- Technology of GaAs metal—Oxide—Semiconductor solar cellsIEEE Transactions on Electron Devices, 1977
- Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodesIEEE Transactions on Electron Devices, 1972
- Electrical Properties of Metal-GaAs Schottky Barrier ContactsJapanese Journal of Applied Physics, 1970
- Experimental Study of Gold-Gallium Arsenide Schottky BarriersJournal of Applied Physics, 1965