GaAs charge-coupled devices
- 15 March 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (6) , 383-385
- https://doi.org/10.1063/1.90062
Abstract
A Schottky‐barrier‐gate buried‐channel GaAs CCD has been successfully demonstrated. A 10‐cell (30 gates) three‐phase device was operated at room temperature. The device employs a natural channel stop formed by the transfer gates extending from an n‐type active region onto a semi‐insulating GaAs substrate.Keywords
This publication has 2 references indexed in Scilit:
- Free charge transfer in charge-coupled devicesIEEE Transactions on Electron Devices, 1972
- New structures for charge-coupled devicesProceedings of the IEEE, 1972