Low-temperature plasma oxidation of GaAs
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (1) , 58-60
- https://doi.org/10.1063/1.89839
Abstract
A low‐temperature plasma oxidation of GaAs (lower than 100 °C) has been realized. The oxidation apparatus mainly consists of a quartz tube chamber, a low‐power rf oscillator and an electrical magnet. The oxidation rate can be controlled in the range 100–600 Å/min by changing the magnetic field perpendicularly applied to the sample. The interface state density between p‐type GaAs and its oxide film is the order of 1010 cm−2 eV−1 around 0.5 eV from the top of the valence band. This low state density suggests that the oxide film can be applied to various GaAs MOS devices. For the oxide film of n‐type GaAs, an anomalous frequency dispersion in the MOS capacitance is found in the accumulation region. This anomaly is very similar to that observed in anodic oxidation.Keywords
This publication has 8 references indexed in Scilit:
- Anomalous frequency dispersion of m.o.s. capacitors formed on n -type GaAs by anodic oxidationElectronics Letters, 1976
- Depletion-mode GaAs MOS FETApplied Physics Letters, 1976
- Plasma oxidation of GaAsApplied Physics Letters, 1976
- X-band performance of GaAs power f.e.t.sElectronics Letters, 1976
- First anodic-oxide GaAs m.o.s.f.e.t.s based on easy technological processesElectronics Letters, 1976
- Thermal oxidation of GaAsApplied Physics Letters, 1975
- Oxidation of GaAs1 − x
P
x
Surface by Oxygen Plasma and Properties of Oxide FilmJournal of the Electrochemical Society, 1974
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962