Plasma oxidation of GaAs
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (1) , 56-58
- https://doi.org/10.1063/1.88872
Abstract
A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one‐step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium‐to‐arsenic ratio of nearly one. The electrical properties (I‐V, C‐V) of the films are such that this process may be useful in device fabrication.Keywords
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