New anodic native oxide of GaAs with improved dielectric and interface properties
- 15 May 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (10) , 567-569
- https://doi.org/10.1063/1.87994
Abstract
A new method of forming an anodic native oxide of GaAs with excellent dielectric and interface properties is described. The oxide is grown in a very stable and reproducible manner in an electrolyte which is a suitable mixture of (i) water, (ii) weak carboxylic acid (tartaric or citric acid), and (iii) polyhydric alcohol. The breakdown field strength of the as‐grown oxide is 5×106 V/cm and the specific resistivity is 1014–1016 Ω cm. Relatively low temperature annealing in hydrogen results in greatly improved interface properties with a density of fast interface states near midgap of 1–2×1011 cm−2 eV−1, with only a small capacitance/voltage hysteresis, and only small frequency dispersion of capacitance in the accumulation region.Keywords
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