dc plasma anodization of GaAs
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (1) , 60-62
- https://doi.org/10.1063/1.89841
Abstract
Oxide films up to 2500 Å thick have been grown by anodization of GaAs in the negative glow region of a dc oxygen discharge. Using Auger analysis, as‐grown samples were found to contain excess Ga in the bulk of the film and excess As in a wide oxide‐GaAs interface region. Preliminary measurements indicate that plasma anodic films grown on both p‐ and n‐type GaAs exhibit electrical properties similar to films formed by liquid anodization.This publication has 11 references indexed in Scilit:
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