The mercury–indium phosphide diode
- 16 July 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 60 (1) , 215-223
- https://doi.org/10.1002/pssa.2210600126
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Mercury probeC-U measurements on GaPPhysica Status Solidi (a), 1978
- Electrical measurements on homogeneous diffused p-type InPJournal of Physics D: Applied Physics, 1977
- Measurement of carrier-concentration profiles in epitaxial indium phosphideElectronics Letters, 1973
- Capacitance-Voltage Measurements with a Mercury-Silicon DiodeJournal of the Electrochemical Society, 1972
- Slow voltage-induced barrier height changes in metal-germanium surface barriersJournal of Physics D: Applied Physics, 1971
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- A Semiautomatic Data Collection System Suitable for Infrared Reflectivity MeasurementsReview of Scientific Instruments, 1969
- Metal-silicon Schottky barriersSolid-State Electronics, 1968
- Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier DiodesJournal of Applied Physics, 1966