Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
- 1 October 1971
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 4 (10) , 1589-1601
- https://doi.org/10.1088/0022-3727/4/10/319
Abstract
A theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film. A generalized approach is taken towards the interface states which considers their communication with both the metal and the semiconductor. Diodes were fabricated with interfacial films ranging from 8 to 26 Å in thickness, and their characteristics are related to this model. The effects of reduced transmission coefficients together with fixed charge in the film are investigated. The interpretation of the current-voltage characteristics and the validity of the C−2-V method in the determination of diffusion potentials are discussed.Keywords
This publication has 15 references indexed in Scilit:
- Carrier transport across metal-semiconductor barriersSolid-State Electronics, 1970
- Dependence of Schottky Barrier Height on Donor ConcentrationJournal of Applied Physics, 1970
- SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATINGApplied Physics Letters, 1968
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier DiodesJournal of Applied Physics, 1966
- Surface-State and Interface Effects in Schottky Barriers at n-Type Silicon SurfacesJournal of Applied Physics, 1965
- Tunneling from Metal to SemiconductorsPhysical Review B, 1965
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962
- Tunneling from an Independent-Particle Point of ViewPhysical Review B, 1961