Growth and Electron Microscopical Investigations of (CaBa)F2 Epitaxial Layers on GaAs and InP Substrates
- 1 September 1986
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 21 (9) , 1139-1142
- https://doi.org/10.1002/crat.2170210903
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Epitaxial growth of lattice-matched CaxSr1−xF2 on (100) and (110) GaAs substratesJournal of Applied Physics, 1984
- Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1983
- The stabilization of metastable phases by epitaxyJournal of Vacuum Science & Technology B, 1983
- The Growth and Characterization of Epitaxial Fluoride Films on SemiconductorsMRS Proceedings, 1983
- Insulating epitaxial films of BaF2, CaF2 and BaxCa1−xF2 grown by MBE on InP substratesJournal of Crystal Growth, 1982
- Structure and properties of transition layers formed in the epitaxy processPhysica Status Solidi (a), 1972