Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy
- 15 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6) , 569-571
- https://doi.org/10.1063/1.94428
Abstract
We report the first epitaxial semiconductor-dielectric-semiconductor (SDS) double heterostructures using the III-V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1−xF2/InP(001), were grown by molecular beam epitaxy and have lattice mismatches of −6.9% and +2.0%, respectively. In situ high-energy electron diffraction showed that the initial stage of epitaxy of the InP/fluoride structure, unlike that of the fluoride/InP structure, exhibits pseudomorphism. Analysis of the electrical properties of SDS devices with an insulator thickness of ∼100 Å indicates both Ohmic and trap-assisted tunneling conduction.Keywords
This publication has 8 references indexed in Scilit:
- Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structuresJournal of Vacuum Science & Technology B, 1983
- Insulating epitaxial films of BaF2, CaF2 and BaxCa1−xF2 grown by MBE on InP substratesJournal of Crystal Growth, 1982
- Vapor Phase Epitaxial Growth of MgO · Al2 O 3Journal of the Electrochemical Society, 1982
- Zone-melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallographyApplied Physics Letters, 1982
- Lateral growth of single-crystal InP over dielectric films by orientation-dependent VPEJournal of Crystal Growth, 1982
- Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and SiApplied Physics Letters, 1982
- The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditionsJournal of Physics D: Applied Physics, 1974
- Epitaxial Growth of Gallium Phosphide on Cleaved and Polished (111) Calcium FluorideJournal of Applied Physics, 1970