Lateral growth of single-crystal InP over dielectric films by orientation-dependent VPE
- 2 January 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (2) , 410-422
- https://doi.org/10.1016/0022-0248(82)90460-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Vapor-phase epitaxy of GaInAsP and InPJournal of Crystal Growth, 1981
- Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxideApplied Physics Letters, 1981
- A technique for producing epitaxial films on reuseable substratesApplied Physics Letters, 1980
- Morphological studies on selective growth of GaAsJournal of Crystal Growth, 1972
- Étude de l'épitaxie localisée du GaAsJournal of Crystal Growth, 1972
- Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAsJapanese Journal of Applied Physics, 1970
- Selective Epitaxial Deposition of Gallium Arsenide in HolesJournal of the Electrochemical Society, 1966
- A Novel Crystal Growth Phenomenon: Single Crystal GaAs Overgrowth onto Silicon DioxideJournal of the Electrochemical Society, 1965