Vapor-phase epitaxy of GaInAsP and InP
- 31 July 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 54 (1) , 101-108
- https://doi.org/10.1016/0022-0248(81)90255-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD processJournal of Crystal Growth, 1980
- Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber MethodJapanese Journal of Applied Physics, 1980
- Preparation and Properties of Vapor-Phase-Epitaxial-Grown GaInAsPJapanese Journal of Applied Physics, 1979
- Low-threshold 1.25-μm vapor-grown InGaAsP cw lasersApplied Physics Letters, 1979
- Vapor Phase Epitaxial Growth and Characterization of Ga1-yInyAs1-xPxQuaternary AlloysJapanese Journal of Applied Physics, 1977
- Vapor Growth of InPJapanese Journal of Applied Physics, 1975
- A comparative thermodynamic analysis of InP and GaAs depositionJournal of Physics and Chemistry of Solids, 1975
- Mass spectrometric and thermodynamics studies of the CVD of some III–V compoundsJournal of Crystal Growth, 1972