Low-threshold 1.25-μm vapor-grown InGaAsP cw lasers
- 15 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (4) , 262-264
- https://doi.org/10.1063/1.90774
Abstract
Vapor‐grown double‐heterojunction lasers of InGaAsP/InP have been prepared with cw room‐temperature threshold currents of 85 mA and differential quantum efficiencies exceeding 50% at 1.25 μm. From several lasers, fundamentaal‐lateral‐ and fundamental‐longitudinal‐mode operation have been observed over moderate current ranges. Over 1000 h of room‐temperature cw operation has been observed to date without significant degradation.Keywords
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