Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasers

15 April 1977

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 30 (8) , 429-431
https://doi.org/10.1063/1.89411

Abstract

Two types of buried‐stripe double‐heterostructure GaInAsP/InP diode lasers have been fabricated. Room‐temperature cw operation has been achieved for junction‐defined devices emitting at 1.21 and 1.25 μm.

Keywords

SEMICONDUCTOR LASERS
JUNCTION DIODES
OPERATION
FABRICATION
THRESHOLD ENERGY
EFFICIENCY
EMISSION SPECTRA
PERFORMANCE

This publication has 3 references indexed in Scilit:

1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasers
Applied Physics Letters, 1977
Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m
Applied Physics Letters, 1976
GaAs–Ga1−xAlxAs buried-heterostructure injection lasers
Journal of Applied Physics, 1974