Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
- 1 January 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (1) , 66-68
- https://doi.org/10.1063/1.92927
Abstract
Epitaxial growth of CaF2 films onto Si(100) and (111) substrates and the growth of Si films onto the CaF2/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that the optimum growth temperatures at which the crystalline quality of the CaF2 films is excellent range from 600 to 800 °C for Si(111) substrates and from 500 to 600 °C for Si (100). It has also been found that a heteroepitaxial Si/CaF2/Si(111) structure is formed by vacuum deposition of Si onto the heated CaF2/Si(111) structure.Keywords
This publication has 3 references indexed in Scilit:
- Interface and surface structure of epitaxial NiSi2 filmsApplied Physics Letters, 1981
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980