11.6 μ Oxygen-Associated Absorption Band in Neutron-Irradiated Silicon
- 1 October 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (11) , 4679-4680
- https://doi.org/10.1063/1.1657265
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Infrared Studies of Defect Production in-Type Si: Irradiation-Temperature DependencePhysical Review B, 1967
- Oxygen-Defect Complexes in Neutron-Irradiated SiliconJournal of Applied Physics, 1966
- OPTICAL PROPERTIES AND THERMAL BEHAVIOR OF NEW ABSORPTION BANDS IN OXYGEN-DOPED SILICON IRRADIATED AT LOW TEMPERATURESApplied Physics Letters, 1966
- Infrared Absorption Spectra of Oxygen-Defect Complexes in Irradiated SiliconPhysical Review B, 1966
- Annealing of Infrared Defect Absorption Bands in 40-MeV Electron-Irradiated SiliconJournal of Applied Physics, 1965
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Infrared Absorption and Photoconductivity in Irradiated SiliconJournal of Applied Physics, 1959
- Simplified Light Reflection Technique for Orientation of Germanium and Silicon CrystalsReview of Scientific Instruments, 1956