OPTICAL PROPERTIES AND THERMAL BEHAVIOR OF NEW ABSORPTION BANDS IN OXYGEN-DOPED SILICON IRRADIATED AT LOW TEMPERATURES
- 15 March 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (6) , 131-132
- https://doi.org/10.1063/1.1754520
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Annealing of Infrared Defect Absorption Bands in 40-MeV Electron-Irradiated SiliconJournal of Applied Physics, 1965
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- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961
- Infrared Absorption and Photoconductivity in Irradiated SiliconJournal of Applied Physics, 1959
- Temperature-Dependent Defect Production in Bombardment of SemiconductorsPhysical Review B, 1959