Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates
- 1 May 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (9) , 4492-4501
- https://doi.org/10.1063/1.350794
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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