Molecular beam epitaxy of semiconductor interfaces and quantum wells for advanced optoelectronic devices
- 1 July 1988
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 12 (5) , 279-287
- https://doi.org/10.1002/sia.740120502
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Elimination of GaAs oval defects and high-throughput fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by MBEJournal of Crystal Growth, 1987
- Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAsJournal of Crystal Growth, 1987
- Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wellsApplied Physics Letters, 1986
- RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsSurface Science, 1986
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs–AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth InterruptionJapanese Journal of Applied Physics, 1986
- Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillationsSuperlattices and Microstructures, 1985
- Transmission electron microscope observation of lattice image of AlxGa1−xAs-AlyGa1−yAs superlattices with high contrastJournal of Applied Physics, 1985
- The Technology and Physics of Molecular Beam EpitaxyPublished by Springer Nature ,1985
- Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxyApplied Physics Letters, 1980
- Theory of a Wide-Gap Emitter for TransistorsProceedings of the IRE, 1957