Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells
- 14 April 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (15) , 1009-1011
- https://doi.org/10.1063/1.96619
Abstract
We report on comparative photoluminescence (PL) studies of GaAs/Al0.33Ga0.67As single quantum well structures grown via molecular beam epitaxy under identical growth conditions employing (a) customary practice of no growth interruption and (b) growth interruption. The growth conditions themselves are chosen to be near optimum, as determined from the growth kinetics exemplified by the reflection high‐energy electron diffraction intensity dynamics. Results show PL lines with fine structure and widths among the narrowest ever reported for 28.3 and 56.6 Å wells. The fine structure is indicative of kinetically controlled interfaces with a predominant step height of one atomic layer and the linewidths a first measurement of intrinsic alloy disorder scattering.Keywords
This publication has 14 references indexed in Scilit:
- Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growthApplied Physics Letters, 1986
- Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam EpitaxyPhysical Review Letters, 1986
- Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high-energy electron diffraction dynamics study of GaAs/AlxGa1−xAs(100) multiple quantum wellsJournal of Vacuum Science & Technology B, 1986
- Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensityApplied Physics Letters, 1985
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics studyApplied Physics Letters, 1985
- Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structuresApplied Physics Letters, 1985
- Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensityJournal of Vacuum Science & Technology B, 1985
- Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlatticeApplied Physics Letters, 1984
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981