Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensity
- 1 August 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 247-249
- https://doi.org/10.1063/1.96234
Abstract
The critical role of the group V pressure in controlling the dynamic growth front morphology during molecular beam epitaxial growth of III-V compounds is demonstrated via computer simulations based upon a configuration-dependent reactive incorporation growth process and experimentally confirmed via measurements of the dynamics of reflection high-energy electron diffraction during homoepitaxy of GaAs (100). Implications for growth conditions desirable for realizing high quality interfaces and high luminescence efficiency in systems such as GaAs/AlxGa1−xAs are discussed.Keywords
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