The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially-grown Sn-doped AlxGa1−xAs
- 15 September 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (6) , 486-487
- https://doi.org/10.1063/1.92768
Abstract
It is shown that the As/Ga flux ratio γf during molecular beam epitaxial growth has significant effects on the photoluminescent (PL) spectra at 5.5 K from a Sn‐doped AlxGa1−x As (x∼0.27–0.33) layer. At any growth temperature Ts samples grown under low γf have higher PL intensity than those grown under high γf . Based on the 5.5‐K PL spectra we arrive at the important conclusion that the highest‐quality AlxGa1−xAs is grown under conditions of high Ts and low γf , followed by layers grown at high Ts and high γf, and at low Ts and low γf , with the poorest‐quality layers grown under conditions of low Ts and high γf. The present results are consistent with the fact that low‐threshold double‐heterostructure lasers are obtained only when Ts is high.Keywords
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