Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics study

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Abstract
Measurements of the time‐dependent intensity in reflection high‐energy electron diffraction during [100] growth of AlxGa1−x As on GaAs (normal interface) and of GaAs on AlxGa1−x As (inverted interface) are reported for such growth on static, dynamic, and relaxing surfaces. It is shown that the growth kinetics imply that interruption of growth for an optimized duration after deposition of each alternating layer can result in structurally and chemically improved interfaces, including the possibility of comparably good normal and inverted interfaces, in heterojunctions, multiple quantum wells, and superlattices.