Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growth
- 10 March 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (10) , 650-652
- https://doi.org/10.1063/1.96733
Abstract
Variations in the static and steady‐state specular beam intensity (I0 and IS, respectively) in reflection high‐energy electron diffraction from GaAs(100) have been examined as a function of substrate temperature (TS) and As4 pressure in molecular beam epitaxy. At a fixed As4 pressure, regimes of reversible and irreversible behavior of I0 and IS as a function of TS are identified. The irreversible regime of I0 is shown to occur at temperatures close to the congruent temperature. At each temperature in this regime, the existence of smoothest, but metastable, surface step density configuration is demonstrated. The maximum in IS is found to occur in this regime. The surface kinetic processes responsible for this behavior are discussed.Keywords
This publication has 14 references indexed in Scilit:
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanismsJournal of Vacuum Science & Technology B, 1985
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics studyApplied Physics Letters, 1985
- Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structuresApplied Physics Letters, 1985
- The dependence of RHEED oscillations on MBE growth parametersJournal of Vacuum Science & Technology B, 1985
- Phase-Locked Epitaxy Using RHEED Intensity OscillationJapanese Journal of Applied Physics, 1984
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983