The Chemical Diffusion of In in Hg0.8Cd0.2Te
- 16 May 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (1) , 173-183
- https://doi.org/10.1002/pssa.2210890117
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Self-diffusion of gallium and antimony in GaSbPhilosophical Magazine A, 1984
- Diffusion in CdxHg1-xTe and related materialsJournal of Crystal Growth, 1982
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: II . Defect Structure of Indium‐DopedJournal of the Electrochemical Society, 1981
- Quasisimultaneous SIMS, AES, XPS, and TDMS study of preferential sputtering, diffusion, and mercury evaporation in CdxHg1−xTeSurface Science, 1981
- Partial Pressures over HgTe ‐ CdTe Solid Solutions: II . Results forJournal of the Electrochemical Society, 1981
- Diffusion of Indium in Hg1 − x Cd x TeJournal of the Electrochemical Society, 1980
- Stoichiometry invariants for ternary and quatenary solid solutions with two nearly perfect sublatticesJournal of Physics and Chemistry of Solids, 1979
- Planar HgCdTe quadrantal heterodyne arrays with GHz response at 10.6 μmInfrared Physics, 1977
- The defect structure of CdTe: Hall dataJournal of Solid State Chemistry, 1975