Progress in High-Power, High Frequency AlGaN/GaN HEMTs
- 4 December 2002
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 194 (2) , 433-438
- https://doi.org/10.1002/1521-396x(200212)194:2<433::aid-pssa433>3.0.co;2-r
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layerJournal of Physics: Condensed Matter, 2002
- Undoped AlGaN/GaN HEMTs for microwave power amplificationIEEE Transactions on Electron Devices, 2001
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000
- AlGaN/GaN heterostructures on insulating AlGaN nucleation layersApplied Physics Letters, 1999