Microstructure and electrical properties of ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer layers
- 9 October 2000
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 12 (43) , 9189-9194
- https://doi.org/10.1088/0953-8984/12/43/309
Abstract
Pb(Zr0.53Ti0.47)O3 (PZT) thin films were prepared on p-type Si(100) substrates with TiO2 buffer layers. Both the PZT films and TiO2 buffer layers were deposited by the pulsed laser deposition technique using a KrF excimer laser. The depth profile of the constituent elements observed by Auger electron spectrometry (AES) showed that TiO2 buffer layers effectively prevented interdiffusion between PZT and Si substrates. The capacitance-voltage (C-V) characteristics of the Pt/PZT/TiO2/Si structures exhibited ferroelectric switching properties and a memory window of about 2.0 V at an applied voltage of 6.0 V.Keywords
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