Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon
- 1 August 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (8A) , L1404-1405
- https://doi.org/10.1143/jjap.27.l1404
Abstract
Yttria-stabilized zirconia (YSZ) films have been grown on Si(100) substrates heated at 800°C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the heteroepitaxial growth of cubic YSZ (200) films on Si(100) substrates. The reflection high-energy electron diffraction of the films show that the and directions in the plane of cubic YSZ nearly coincide with the and directions of the Si substrate, respectively. Accordingly, (200)-oriented cubic YSZ could be exactly (<1%) lattice-matched to (100)-oriented Si substrates.Keywords
This publication has 7 references indexed in Scilit:
- Formation of High-Tc Superconducting BiSrCaCu2Ox Films on ZrO2/Si(100)Japanese Journal of Applied Physics, 1988
- Evaluation of crystalline quality of zirconium dioxide films on silicon by means of ion-beam channelingJournal of Applied Physics, 1988
- Growth of crystalline zirconium dioxide films on siliconJournal of Applied Physics, 1985
- Heteroepitaxial Si films on yttria-stabilized, cubic zirconia substratesApplied Physics Letters, 1983
- Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memoryIEEE Transactions on Electron Devices, 1982
- Phase Equilibria and Ordering in the System ZrO2‐Y2O3Journal of the American Ceramic Society, 1978
- Preparation and Properties of Pyrolytic Zirconium Dioxide FilmsJournal of the Electrochemical Society, 1971