Heteroepitaxial Si films on yttria-stabilized, cubic zirconia substrates
- 15 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (6) , 501-503
- https://doi.org/10.1063/1.93982
Abstract
Epitaxial single-crystal growth of Si films has been achieved on the (100), (110), and (111) planes of yttria-stabilized, cubic zirconia single crystals. The Si films were grown by the pyrolysis of SiH4 at temperatures in the range 950–1075 °C and at deposition rates of 0.08–1.2 μm/min. The structural and electrical properties of the Si films have been determined by Rutherford backscattering and channeling, x-ray diffraction, and Hall effect measurements. Several 0.4–0.5-μm-thick (100) and (110) Si films on cubic zirconia were found to be of higher crystal quality than commercial (100) Si-on-sapphire films of similar thickness.Keywords
This publication has 8 references indexed in Scilit:
- Measurements of defects and strain in SOS films after cw Ar laser annealing in the liquid phase regimeApplications of Surface Science, 1981
- Phase Equilibria and Ordering in the System ZrO2‐Y2O3Journal of the American Ceramic Society, 1978
- The optimization of a rutherford backscattering geometry for enhanced depth resolutionNuclear Instruments and Methods, 1975
- A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and SpinelJournal of the Electrochemical Society, 1974
- Sublimation of Aluminum Oxide in HydrogenJournal of the American Ceramic Society, 1966
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964
- Ionic Conductivity of Cubic Solid Solutions in the System CaO—Y2O3—ZrO2Journal of the American Ceramic Society, 1964
- Thermal Expansion of Yttria‐Stabilized ZirconiaJournal of the American Ceramic Society, 1964