Measurements of defects and strain in SOS films after cw Ar laser annealing in the liquid phase regime
- 31 December 1981
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 9 (1-4) , 299-314
- https://doi.org/10.1016/0378-5963(81)90044-1
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Erratum: Recrystallization of silicon-on-sapphire by cw Ar laser irradiation: Comparison between the solid- and the liquid-phase regimesApplied Physics Letters, 1981
- Recrystallization of silicon-on-sapphire by cw Ar laser irradiation: Comparison between the solid- and the liquid-phase regimesApplied Physics Letters, 1980
- Crystallization of Amorphous Silicon Layers RF-Sputtered on Sapphire by CW Ion Laser AnnealingJapanese Journal of Applied Physics, 1980
- Stress-relieved regrowth of silicon on sapphire by laser annealingApplied Physics Letters, 1980
- (Invited) Physics and Device Technology of Silicon on SapphireJapanese Journal of Applied Physics, 1978
- Direct Observation of the Structure of Thin, Commercially Useful Silicon on Sapphire Films by Cross Section Transmission Electron MicroscopyJournal of the Electrochemical Society, 1977
- On “measurements” of radiation damage by backscattering experimentsRadiation Effects, 1976
- Dechanneling of fast particles by lattice defectsJournal of Nuclear Materials, 1974
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Electronic Effects in the Elastic Constants of-Type SiliconPhysical Review B, 1967