Stress-relieved regrowth of silicon on sapphire by laser annealing
- 15 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (6) , 419-422
- https://doi.org/10.1063/1.91523
Abstract
We report on an annealing process which controls the stress in SOS. By laser power inputs of various durations, we regrow the Si on a compressed sapphire surface. The room temperature stress in Si correlates with the time scale of the annealing process. The effect can be understood in terms of thermal stress at the sapphire surface.Keywords
This publication has 4 references indexed in Scilit:
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- Elastoresistance of n-type silicon on sapphireJournal of Applied Physics, 1974
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