On “measurements” of radiation damage by backscattering experiments
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 28 (3-4) , 253-255
- https://doi.org/10.1080/00337577608237448
Abstract
It is generally meaningless to extract a measurement of the “number of disordered atoms” from a backscattering experiment. The only case where this is a measurable quantity is that of amorphous regions imbedded in a perfect crystal. In all other cases (particularly in metals), a backscattering experiment can yield only an indication about the degree of lattice disorder. The number and nature of defects cannot be determined by a backscattering experiment, but it is suggested that the energy dependence of the dechannelling could be of some help to distinguish between different possible types of defects.Keywords
This publication has 11 references indexed in Scilit:
- Effects of dislocations on the energy loss of channeled particlesPhysics Letters A, 1975
- Investigation of radiation damage in silicon by a backscattering methodRadiation Effects, 1975
- Study of the annealing behaviour of high dose implants in silicon and germanium crystalsRadiation Effects, 1975
- Dechanneling of fast particles by lattice defectsJournal of Nuclear Materials, 1974
- On the annealing of damage produced by copper ion implantation of silicon single crystalsRadiation Effects, 1974
- Dechanneling from 2-MeVDamage in GoldPhysical Review B, 1973
- Ionization, thermal, and flux dependences of implantation disorder in siliconRadiation Effects, 1971
- Electrical and electron microscopy observations on defects in ion implanted siliconRadiation Effects, 1971
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Dechannelling Cylinder of DislocationsPhysica Status Solidi (b), 1968