On the annealing of damage produced by copper ion implantation of silicon single crystals
- 1 January 1974
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 23 (1) , 63-66
- https://doi.org/10.1080/00337577408232047
Abstract
In a previous paper1 experiments were described in which Rutherford scattering, transmission electron microscopy and infra-red absorption were used in parallel studies of the annealing of damage produced by boron ion implantation of silicon single crystals. It was shown that Rutherford scattering alone provides only limited information regarding the degree and detailed nature of the disorder. For example the damage peak reaches the random level at an ion fluence considerably less than that required to create a continuous amorphous layer, and the damage consists of crystallographic clusters as well as amorphous zones, at least for light ion implantation. These observations are-of importance for a complete understanding of the nucleation2 of darnage centers during ion bombardment of silicon.Keywords
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