Study of the annealing behaviour of high dose implants in silicon and germanium crystals

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Abstract
High doses of 3.1014 to 3.1016 ions/cm2 of Ge, Sn, Pb, Pt, Pd, In, Sb and Tl ions have been implanted into silicon and germanium single crystals with energies between 35 and 60 keV. The annealing behaviour of the implanted layers has been studied with electrical and backscattering methods. The change of the electrical properties are correlated with the reordering process of the implanted layer. The damaged layer in the silicon crystal starts to anneal at 600°C and in the germanium crystal at 400°C, nearly independent on the ion species. The reordering process itself is dose dependent, even for doses greater than 1016 ions/cm2. Some of the implanted ions can be found as substitutionals after annealing, like Ge in silicon at 600°C and In in germanium at 400°C.