Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits
- 15 December 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (12) , 524-527
- https://doi.org/10.1063/1.1653799
Abstract
Si was diffused along the evaporated Al layer of an integrated‐circuit structure at temperatures between 360 and 560 °C, and the resulting concentration profile analyzed by electron microprobe. The Si solubility was found to agree with literature values for Si in wrought Al. The Si diffusivity was found to be substantially enhanced, however, probably due to a high density of imperfections in the evaporated Al film. Our measured diffusivities indicate an activation energy EA ≃ 0. 8 eV, about 40% less than the value for Si in wrought Al.Keywords
This publication has 3 references indexed in Scilit:
- Reactions of Silicon with Surfaces of Close-Packed Metals: Silicon on AluminumJournal of Applied Physics, 1971
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971
- Characteristics of aluminum-silicon schottky barrier diodeSolid-State Electronics, 1970