LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM

1 March 1971

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 18 (5) , 178-181
https://doi.org/10.1063/1.1653615

Abstract

The backscattering method is employed to obtain microscopic information about solid‐solid reactions of Si with thin layers (500–2000 Å) of both vacuum‐evaporated Au and sputtered Pt. A remarkable observation is the migration of Si atoms into Au and Pt at relatively low temperatures (150 and 350 °C, respectively). Migration of Si in Pt induces first the formation of Pt₂Si‐like compounds and then PtSi. In the Au–Si system, on the other hand, Si moves through and accumulates on the Au surface in the form of SiO₂ under an oxidizing heat‐treatment atmosphere.

Keywords

This publication has 3 references indexed in Scilit:

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