The optimization of a rutherford backscattering geometry for enhanced depth resolution
- 1 June 1975
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 126 (2) , 205-215
- https://doi.org/10.1016/0029-554x(75)90633-3
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Ion ImplantationAnnual Review of Materials Science, 1974
- Depth distribution of implanted helium and other low-z elements in metal films using proton backscatteringApplied Physics Letters, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Range distribution of implanted ions in SiO2, Si3N4, and Al2O3Applied Physics Letters, 1973
- Metallurgical applications of ion implantation and ion bombardmentVacuum, 1973
- Surface Effects in the Measurement of Range Profiles by Oxide DissolutionJournal of the Electrochemical Society, 1973
- On the application of Rutherford scattering and channelling techniques to study semiconductor surfacesSurface Science, 1972
- Anomalously high collection of copper ions implanted in aluminiumPhysica Status Solidi (a), 1971
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967