On the application of Rutherford scattering and channelling techniques to study semiconductor surfaces
- 31 August 1972
- journal article
- Published by Elsevier in Surface Science
- Vol. 32 (2) , 278-286
- https://doi.org/10.1016/0039-6028(72)90159-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Investigation of Te-Doped GaAs Annealing Effects by Optical- and Channeling-Effect MeasurementsJournal of Applied Physics, 1971
- Alloying Behavior of Au and Au–Ge on GaAsJournal of Applied Physics, 1971
- Surface preparation of single crystal n-type GaAs substrates studied by the channeling techniquePhysica Status Solidi (a), 1971
- Channeling Studies in Diamond-Type LatticesPhysical Review B, 1969
- A Polishing Etchant for III–V SemiconductorsJournal of the Electrochemical Society, 1962
- Etch Pits in Gallium ArsenideJournal of Applied Physics, 1960