Investigation of Te-Doped GaAs Annealing Effects by Optical- and Channeling-Effect Measurements
- 1 September 1971
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (10) , 3982-3987
- https://doi.org/10.1063/1.1659714
Abstract
Backscattering and channeling‐effect measurements with 2.5‐MeV helium ions and measurements of the position of the infrared reflectivity plasma edge were used to investigate the absolute concentration of Te, the percentage of Te on lattice sites, and the free‐carrier concentration in GaAs doped with [Te] ≈ 1019 cm−3 as a function of anneal. A 700°C anneal produced a reduction in carrier concentration [ne] by 20±2% (from the preanneal value of 5×1018 cm−3), and in the fraction of Te atoms on lattice sites. After an anneal at 1100°C, followed by quenching, [ne] rose to 7×1018 cm−3 while the Te distribution reverted to the original highly substitutional form. Throughout the experiment no measurable change from [Te]=9×1018 cm−3 was found. The correlations are discussed and related to existing models for anneal‐dependent complexes.This publication has 7 references indexed in Scilit:
- Analysis of amorphous layers on silicon by backscattering and channeling effect measurementsSurface Science, 1970
- Optical Properties of n-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAsJournal of Applied Physics, 1969
- Some Local-Mode Measurements of Li-Diffused, Te-Doped GaAsJournal of Applied Physics, 1967
- Measurements of Electron Concentration in GaAs Using Plasma Reflection EdgeJapanese Journal of Applied Physics, 1967
- Chemical analysis of surfaces using alpha particlesJournal of Geophysical Research, 1965
- Changes in Electron Concentration of Donor-Doped GaAs Crystals Caused by AnnealingJournal of Applied Physics, 1963
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959