Changes in Electron Concentration of Donor-Doped GaAs Crystals Caused by Annealing

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Abstract
GaAs doped with ∼1019 cm−3 Se or Te shows reversible temperature‐dependent changes in electron (donor) concentration over the temperature range 650 to 1100°C. Crystals containing between 2×1018 cm−3 to approximately 1019 cm−3 donors conform to the same equilibrium curve with an enthalpy of ∼0.5 eV. The behavior is that expected for a solubility equilibrium. Evidence against an equilibrium involving donor precipitation is presented, and the suggestion that the donors may interact to form molecules is discussed.

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