Evidence for the Existence of High Concentrations of Lattice Defects in GaAs
- 15 September 1962
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 9 (6) , 252-254
- https://doi.org/10.1103/physrevlett.9.252
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.9.252Keywords
This publication has 5 references indexed in Scilit:
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- Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3Journal of Applied Physics, 1960
- The preparation and properties of gallium arsenide single crystalsJournal of Physics and Chemistry of Solids, 1958
- Isotopic and Other Types of Thermal Resistance in GermaniumPhysical Review B, 1958