Evaluation of crystalline quality of zirconium dioxide films on silicon by means of ion-beam channeling
- 15 January 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (2) , 581-582
- https://doi.org/10.1063/1.340093
Abstract
Zirconium dioxide (ZrO2) films have been grown on Si(100) and Si(111) substrates at 800 °C by vacuum evaporation. A channeling spectrum of the Rutherford backscattering on the ZrO2 films shows that ZrO2 films [tetragonal (200)] are epitaxially grown on Si(100) substrate at 800 °C, which is consistent with x-ray diffraction and reflection high-energy electron diffraction observations. The spread of crystallite orientation in the epitaxial film is estimated to be 0.32°, by analyzing the angular dependence of the total backscattering yield.This publication has 6 references indexed in Scilit:
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