Separate estimate of crystalline orientations and scattering centers in polycrystals by backscattering technique

Publisher Website
Google Scholar
Abstract
A novel method using backscattering and channeling techniques is presented to estimate separately two dominant dechanneling factors in polycrystals, that is, spread of crystallite orientations and existence of scattering centers. It is theoretically shown that both factors can independently be estimated by measuring angular dependences of backscattering yield around the channeling axis. The angular dips on Pd2Si layers formed on single‐crystalline Si substrates are measured by using 1–2‐MeV protons, He+, and N+ ions. The channeling measurements using N+ ions are shown to be a useful tool for analysis of polycrystalline layers. By using the above method, crystalline perfection of these layers is also discussed.

This publication has 5 references indexed in Scilit: