Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation
- 5 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (1) , 51-53
- https://doi.org/10.1063/1.109748
Abstract
We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high‐quality mesoscopic channels. Low‐energy Si implantation compensates the surface potential of a modulation‐doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub‐μm to 5 μm wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3×105 cm2/V s and a ballistic length of 3.1 μm at 1.5 K.Keywords
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