High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5R)
- https://doi.org/10.1143/jjap.30.902
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAsApplied Physics Letters, 1989
- Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperaturesSemiconductor Science and Technology, 1989
- Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxyApplied Physics Letters, 1988
- GaAs structures with electron mobility of 5×106 cm2/V sApplied Physics Letters, 1987
- Two-dimensional electron gas structures with mobilities in excess of 3×106 cm2 V−1 s−1Journal of Applied Physics, 1987
- Two-dimensional electron gas of very high mobility in planar doped heterostructuresJournal de Physique, 1987
- Electron mobility in modulation-doped heterostructuresPhysical Review B, 1984
- Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1983
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958