Two-dimensional electron gas of very high mobility in planar doped heterostructures
- 1 January 1987
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 48 (12) , 2049-2052
- https://doi.org/10.1051/jphys:0198700480120204900
Abstract
We demonstrate how it is possible to optimize the reduction of remote ionized impurity scattering in modulation doped heterostructures. This can be obtained by a novel implementation of the doping in the barrier using two planar doped layers separated by a large spacer. We have verified this prediction in GaAs/GaAlAs heterojunctions and obtained in preliminary studies very high mobilities reaching a peak value of 3.7 × 106cm2V-1s -1 at a sheet electron density of 1.8 x 1011 cm-2Keywords
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