Delta- (°-) doping in MBE-grown GaAs: Concept and device application

This publication has 10 references indexed in Scilit:

• Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1986
• Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer
  Solid State Communications, 1986
• Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1986
• Nonlinear high-frequency response of GaAs metal-semiconductor field-effect transistors
  Applied Physics Letters, 1986
• The delta-doped field-effect transistor (δFET)
  IEEE Transactions on Electron Devices, 1986
• Photoconductivity in selectively n- and p-doped AlxGa1−xAs/GaAs heterostructures
  Solid-State Electronics, 1986
• GaAs sawtooth superlattice laser emitting at wavelengths λ>0.9 μm
  Applied Physics Letters, 1985
• The δ-Doped Field-Effect Transistor
  Japanese Journal of Applied Physics, 1985
• Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAs
  Journal of Applied Physics, 1980
• Graded channel FET's: Improved linearity and noise figure
  IEEE Transactions on Electron Devices, 1978