Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy
- 28 March 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (13) , 1086-1088
- https://doi.org/10.1063/1.99219
Abstract
We report on the growth of modulation‐doped GaAs/Alx Ga1−xAs heterostructures with mobilities (μ) on the order of 1×106 cm2 /V s (at 4.2 K) and areal densities (ns ) below 8×1010 cm−2 . In growing these structures we employ the atomic plane doping technique and ultrathick (>1000 Å) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs ns as a function of illumination or gate voltage indicate μ∼nαs behavior with α≂0.6 and, even for ns ≂1.4×1010 cm−2 , μ has a value in excess of 0.3×106 cm2 /V s.Keywords
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