Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy
- 18 August 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (7) , 391-393
- https://doi.org/10.1063/1.97597
Abstract
We report very high purity, unintentionally doped n‐type GaAs with the lowest acceptor background of all reported molecular beam epitaxy (MBE) GaAs layers. The residual acceptor concentration is 2.4×1013 cm−3 and the residual donor concentration is 1.5×1014 cm−3, yielding a compensation ratio of Na/Nd=0.160. The measured Hall mobility is 163 000 cm2/V s at 77 K with a peak value of 216 000 cm2/V s at 45.9 K. The limitations of the Hall mobility at 77 K as a figure of merit are discussed and more accurate figures of merit are considered. The initial preparation of the MBE system and the growth conditions leading to the reduced incorporation of acceptor impurities are also presented.Keywords
This publication has 7 references indexed in Scilit:
- Molecular beam epitaxy of gallium arsenide using direct radiative substrate heatingJournal of Vacuum Science & Technology B, 1986
- Characterization of high-purity Si-doped molecular beam epitaxial GaAsJournal of Applied Physics, 1985
- Summary Abstract: High purity GaAs and AlGaAs grown by MBEJournal of Vacuum Science & Technology B, 1984
- Growth of high-purity GaAs layers by molecular beam epitaxyApplied Physics Letters, 1983
- Electron Mobility in High-Purity GaAsJournal of Applied Physics, 1970
- Screening effects in polar semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955