Noise and Grain-Boundary Diffusion in Aluminum and Aluminum Alloys
- 25 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (22) , 2487-2490
- https://doi.org/10.1103/physrevlett.55.2487
Abstract
We have measured the noise in polycrystalline films of Al, Al-Si(1%), and Al-Cu(4%) in the temperature range of 300 to 600 K. The temperature dependence indicated activation energies of 0.69, 0.80, and 0.89 eV, respectively. These energies are similar to the activation energies found for Al diffusion along grain boundaries for films of the same size and composition measured in the same temperature range. Measurements of samples with identical compositions but differing widths and thicknesses revealed significant departures from the usual inverse volume dependence of the noise.
Keywords
This publication has 9 references indexed in Scilit:
- Low-frequency fluctuations in solids:noiseReviews of Modern Physics, 1981
- Diffusion of silicon in aluminumMetallurgical Transactions A, 1978
- Temperature Dependence ofNoise in Silver and CopperPhysical Review Letters, 1977
- Flicker () noise: Equilibrium temperature and resistance fluctuationsPhysical Review B, 1976
- Electromigration effects in aluminum alloy metallizationJournal of Electronic Materials, 1974
- Screening of metal film defects by current noise measurementsApplied Physics Letters, 1973
- 1/ƒ noise is no surface effectPhysics Letters A, 1969
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969
- Current-induced mass transport in aluminumJournal of Physics and Chemistry of Solids, 1964